MW0149
sample:			Graphene grown in copper foil (Easy Transfer Graphene by Graphenea Inc.)
Substrate: 		Si/SiO2 wafer - oxide thickness 275 nm
sample modification: 	Annealed in vaccum furnace at 1E-6 mbar and 300 °C for 30 min 


MW0159
sample:			Graphene grown in copper foil (Easy Transfer Graphene by Graphenea Inc.)
Substrate: 		Si/SiO2 wafer - oxide thickness 275 nm
sample modification: 	covered with approx. 300 nm PMMA 950k - exposed to an electron beam (15 keV, 200 pA, various doses) and developed in 2:1 IPA:water


MW0160
sample:			Graphene grown in copper foil (Easy Transfer Graphene by Graphenea Inc.)
Substrate: 		Si/SiO2 wafer - oxide thickness 275 nm
sample modification: 	covered with transfered PMMA mask and developed in 2:1 IPA:water


MW0170
sample:			Graphene grown in copper foil (Easy Transfer Graphene by Graphenea Inc.)
Substrate: 		Si/SiO2 wafer - oxide thickness 275 nm
sample modification: 	covered with approx. 300 nm PMMA 950k - exposed to an electron beam (15 keV, 200 pA, various doses) and developed in 2:1 IPA:water
			Annealed in vaccum furnace at 1E-6 mbar and 300 °C for 30 min