Chernikov, AlexejAlexejChernikovKoch, MartinMartinKochLaumer, BernhardBernhardLaumerWassner, Thomas A.Thomas A.WassnerEickhoff, MartinMartinEickhoffKoch, Stephan W.Stephan W.KochChatterjee, SangamSangamChatterjee2023-06-022012-03-052023-06-022011http://nbn-resolving.de/urn:nbn:de:hebis:26-opus-86497https://jlupub.ub.uni-giessen.de/handle/jlupub/16382http://dx.doi.org/10.22029/jlupub-15762The temperature and carrier-density dependent excitonic relaxation in bulk ZnO is studied by means of time-resolved photoluminescence. A rate-equation model is used to analyze the population dynamics and the transitions between different exciton states. Intra-excitonic (n=1) to (n=2) relaxation is clearly identified at low excitation densities and lattice temperatures with a characteristic time constant of 6±0.5 ps.enIn Copyrightintra-exitonic relaxationbulk ZnOexciton statesddc:530