Now showing items 1-3 of 3

    • Exciton confinement in homo- and heteroepitaxial ZnO/Zn(1-x)Mg(x)O quantum wells with x < 0.1 

      Laumer, Bernhard; Wassner, Thomas A.; Schuster, Fabian; Stutzmann, Martin; Schörmann, Jörg; Rohnke, Marcus; Chernikov, Alexej; Bornwasser, Verena; Koch, Martin; Chatterjee, Sangam; Eickhoff, Martin (2011)
      ZnO/Zn(1 - x)Mg(x)O single quantum well (SQW) structures with well widths d(W) between 1.1nm and 10.4 nm were grown by plasma-assisted molecular beam epitaxy both heteroepitaxially on c-plane sapphire and homoepitaxially ...
    • Intra-excitonic relaxation dynamics in ZnO 

      Chernikov, Alexej; Koch, Martin; Laumer, Bernhard; Wassner, Thomas A.; Eickhoff, Martin; Koch, Stephan W.; Chatterjee, Sangam (2011)
      The temperature and carrier-density dependent excitonic relaxation in bulk ZnO is studied by means of time-resolved photoluminescence. A rate-equation model is used to analyze the population dynamics and the transitions ...
    • Self-assembled GaN quantum wires on GaN/AlN nanowire templates 

      Arbiol, Jordi; Magen, Cesar; Becker, Pascal; Jacopin, Gwénolé; Chernikov, Alexey; Schäfer, Sören; Furtmayr, Florian; Tchernycheva, Maria; Rigutti, Lorenzo; Teubert, Jörg; Chatterjee, Sangam; Morante, Joan R.; Eickhoff, Martin (2012)
      We present a novel approach for self-assembled growth of GaN quantum wires (QWRs) exhibiting strong confinement in two spatial dimensions. The GaN QWRs are formed by selective nucleation on {11 (2) over bar0} (a-plane) ...