Zweitveröffentlichungen (grüner Weg)

Dauerhafte URI für die Sammlung

jlupub.ub.uni-giessen.de/handle/jlupub/122

Stöbern nach

Auflistung Zweitveröffentlichungen (grüner Weg) nach Autor:in "Arbiol, Jordi"

Gerade angezeigt 1 - 2 von 2
  • Vorschaubild
    Item
    A review of MBE grown 0D, 1D and 2D quantum structures in a nanowire
    (2013) Mata, Maria de la; Zhou, Xiang; Furtmayr, Florian; Teubert, Jörg; Gradecak, Silvija; Eickhoff, Martin; Fontcuberta i Morral, Anna; Arbiol, Jordi
    We review different strategies to achieve a three-dimensional energy bandgap modulation in a nanowire (NW) by the introduction of self-assembled 0D, 1D and 2D quantum structures, quantum dots (QDs), quantum wires (QWRs) and quantum wells (QWs). Starting with the well-known axial, radial (coaxial/prismatic) or polytypic quantum wells in GaN/AlN, GaAs/AlAs or wurtzite/zinc-blende systems, respectively, we move to more sophisticated structures by lowering their dimensionality. New recent approaches developed for the self-assembly of GaN quantum wires and InAs or AlGaAs quantum dots on single nanowire templates are reported and discussed. Aberration corrected scanning transmission electron microcopy is presented as a powerful tool to determine the structure and morphology at the atomic scale allowing for the creation of 3D atomic models that can help us to understand the enhanced optical properties of these advanced quantum structures.
  • Vorschaubild
    Item
    Self-assembled GaN quantum wires on GaN/AlN nanowire templates
    (2012) Arbiol, Jordi; Magen, Cesar; Becker, Pascal; Jacopin, Gwénolé; Chernikov, Alexey; Schäfer, Sören; Furtmayr, Florian; Tchernycheva, Maria; Rigutti, Lorenzo; Teubert, Jörg; Chatterjee, Sangam; Morante, Joan R.; Eickhoff, Martin
    We present a novel approach for self-assembled growth of GaN quantum wires (QWRs) exhibiting strong confinement in two spatial dimensions. The GaN QWRs are formed by selective nucleation on {11 (2) over bar0} (a-plane) facets formed at the six intersections of {1 (1) over bar 00} (m-plane) sidewalls of AlN/GaN nanowires used as a template. Based on microscopy observations we have developed a 3D model explaining the growth mechanism of QWRs. We show that the QWR formation is governed by self-limited pseudomorphic growth on the side facets of the nanowires (NWs). Quantum confinement in the QWRs is confirmed by the observation of narrow photoluminescence lines originating from individual QWRs with emission energies up to 4.4 eV. Time-resolved photoluminescence studies reveal a short decay time (similar to 120 ps) of the QWR emission. Capping of the QWRs with AlN allows enhancement of the photoluminescence, which is blue-shifted due to compressive strain. The emission energies from single QWRs are modelled assuming a triangular cross-section resulting from self-limited growth on a-plane facets. Comparison with the experimental results yields an average QWR diameter of about 2.7 nm in agreement with structural characterization. The presented results open a new route towards controlled realization of one-dimensional semiconductor quantum structures with a high potential both for fundamental studies and for applications in electronics and in UV light generation.