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dc.contributor.authorMengel, Nils
dc.contributor.authorGümbel, Lukas
dc.contributor.authorKlement, Philip
dc.contributor.authorFey, Melanie
dc.contributor.authorFuchs, Christian
dc.contributor.authorVolz, Kerstin
dc.contributor.authorChatterjee, Sangam
dc.contributor.authorStein, Markus
dc.date.accessioned2023-12-01T13:59:24Z
dc.date.available2023-12-01T13:59:24Z
dc.date.issued2023
dc.identifier.urihttps://jlupub.ub.uni-giessen.de//handle/jlupub/18729
dc.identifier.urihttp://dx.doi.org/10.22029/jlupub-18093
dc.description.abstractThe ongoing miniaturization of semiconductor devices renders charge-carrier transport along interfaces increasingly important. The characteristic length scales in state-of-the-art semiconductor technology span only a few nanometers. Consequently, charge-carrier transport inevitably occurs directly at interfaces between adjacent layers rather than being confined to a single material. Herein, charge-carrier diffusion is systematically studied in prototypical active layer systems, namely, in type-I direct-gap quantum wells and in type-II heterostructures. The impact of internal interfaces is revealed in detail as charge-carrier diffusion takes place much closer to or even across the internal interfaces in type-II heterostructures. Type-I quantum wells and type-II heterostructures exhibit comparable diffusion rates given similar inhomogeneous exciton linewidths. Consequently, the changes in the structural quality of the interfaces are responsible for changes in diffusion and charge-carrier transport along interfaces rather than the existence of the interfaces themselves.
dc.description.sponsorshipDeutsche Forschungsgemeinschaft (DFG); ROR-ID:018mejw64
dc.language.isoen
dc.rightsNamensnennung - Nicht kommerziell - Keine Bearbeitungen 4.0 International
dc.rights.urihttps://creativecommons.org/licenses/by-nc-nd/4.0/
dc.subjectcharge-carrier transport
dc.subjectcharge-transfer excitons
dc.subjectdiffusion
dc.subjectinternal interfaces
dc.subjectsemiconductor heterostructures
dc.subject.ddcddc:530
dc.titleThe Influence of Internal Interfaces on Charge-Carrier Diffusion in Semiconductor Heterostructures
dc.typearticle
local.affiliationFB 07 - Mathematik und Informatik, Physik, Geographie
local.projectCollaborative Research Center SFB 1083 (Project no. 223848855)
local.source.journaltitlePhysica status solidi. B, Basic solid state physics
local.source.volume260
local.source.number9
local.source.articlenumber2300103
local.source.urihttps://doi.org/10.1002/pssb.202300103


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