Intra-excitonic relaxation dynamics in ZnO
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Abstract
The temperature and carrier-density dependent excitonic relaxation in bulk ZnO is studied by means of time-resolved photoluminescence. A rate-equation model is used to analyze the population dynamics and the transitions between different exciton states. Intra-excitonic (n=1) to (n=2) relaxation is clearly identified at low excitation densities and lattice temperatures with a characteristic time constant of 6±0.5 ps.Link to publications or other datasets
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Dieser Beitrag ist mit Zustimmung des Rechteinhabers aufgrund einer (DFG geförderten) Allianz- bzw. Nationallizenz frei zugänglich. This publication is with permission of the rights owner freely accessible due to an Alliance licence and a national licence (funded by the DFG, German Research Foundation) respectively.
Original publication in
Applied Physics Letters, 2011, 99(23), Article 231910; doi:10.1063/1.3668102